Nanoscale Transistors: Advancements, Challenges, and Future Directions
Keywords:
Nanoscale transistors, FinFETs, Gate-All-Around (GAA) transistors, semiconductor technology, quantum effects, device scalingAbstract
Nanoscale transistors represent a pivotal advancement in electronics, enabling the continued scaling of semiconductor devices and the enhancement of performance metrics such as speed, power efficiency, and miniaturization. This paper reviews the fundamental principles underlying nanoscale transistors, explores recent technological advancements, examines key challenges, and discusses future directions. Emphasis is placed on the transition from traditional silicon-based transistors to emerging technologies, including FinFETs, gate-all-around transistors, and beyond.
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Copyright (c) 2023 International Journal of Multidisciplinary Innovation and Research Methodology, ISSN: 2960-2068
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.