Nanoscale Transistors: Advancements, Challenges, and Future Directions

Authors

  • Neeraj Kumar

Keywords:

Nanoscale transistors, FinFETs, Gate-All-Around (GAA) transistors, semiconductor technology, quantum effects, device scaling

Abstract

Nanoscale transistors represent a pivotal advancement in electronics, enabling the continued scaling of semiconductor devices and the enhancement of performance metrics such as speed, power efficiency, and miniaturization. This paper reviews the fundamental principles underlying nanoscale transistors, explores recent technological advancements, examines key challenges, and discusses future directions. Emphasis is placed on the transition from traditional silicon-based transistors to emerging technologies, including FinFETs, gate-all-around transistors, and beyond.

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Published

2023-06-12

How to Cite

Neeraj Kumar. (2023). Nanoscale Transistors: Advancements, Challenges, and Future Directions. International Journal of Multidisciplinary Innovation and Research Methodology, ISSN: 2960-2068, 2(2), 67–70. Retrieved from https://ijmirm.com/index.php/ijmirm/article/view/129